Bistability signatures in nonequilibrium charge transport through molecular quantum dots

被引:64
作者
Albrecht, Klaus Ferdinand [1 ]
Wang, Haobin [2 ]
Muehlbacher, Lothar [1 ]
Thoss, Michael [3 ]
Komnik, Andreas [4 ]
机构
[1] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany
[2] New Mexico State Univ, Dept Chem & Biochem, Las Cruces, NM 88003 USA
[3] Univ Erlangen Nurnberg, Inst Theoret Phys & Interdisziplinares, Zentrum Mol Mat, D-91058 Erlangen, Germany
[4] Heidelberg Univ, Inst Theoret Phys, D-69120 Heidelberg, Germany
基金
美国国家科学基金会;
关键词
NEGATIVE DIFFERENTIAL RESISTANCE; SINGLE-MOLECULE; CONDUCTANCE; JUNCTIONS; TRANSISTORS;
D O I
10.1103/PhysRevB.86.081412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the transient nonequilibrium dynamics of a molecular junction biased by a finite voltage and strongly coupled to internal vibrational degrees of freedom. Using two different, numerically exact techniques, diagrammatic Monte Carlo and the multilayer multiconfiguration time-dependent Hartree method, we show that the steady-state current through the junction may depend sensitively on the initial preparation of the system, thus revealing signatures of bistability. The influence of the bias voltage and the transient dynamics on the phenomenon of bistability is analyzed. Furthermore, a possible relation to the phenomenon of stochastic switching in nanoelectromecanical devices is discussed.
引用
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页数:5
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