Transition temperature of ferromagnetic semiconductors: A dynamical mean field study

被引：151

作者：

Chattopadhyay, A

Das Sarma, S

Millis, AJ

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[3] Rutgers State Univ, Dept Phys & Astron, Ctr Mat Theory, Piscataway, NJ 08854 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.87.227202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We formulate a theory of doped magnetic semiconductors such as Ga1-xMnxAs which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T-c as a function of magnetic coupling strength J, carrier density n. and Mn density x. We find that T-c is determined by a subtle interplay between carrier density and magnetic coupling.

引用

页码：227202 / 227202

页数：4

共 21 条

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