Effect of the annealing process on CuInS2 thin films prepared by using aerosol jet deposition

被引:0
作者
Fan, Rong [1 ]
Kong, Seon Mi [1 ]
Kim, Dong Chan [1 ]
Jung, Sung Hee [1 ]
Chung, Chee Won [1 ]
机构
[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea
基金
新加坡国家研究基金会;
关键词
CuInS2; Aerosol jet deposition; Sulphurization; Thin-film solar cell; CHEMICAL SPRAY-PYROLYSIS; SOLAR-CELLS; ELECTRODEPOSITION;
D O I
10.3938/jkps.60.2007
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
CuInS2 thin films were prepared on soda lime glasses by using the aerosol jet deposition (AJD) method. The effects of the [Cu]/[In] ratio and the annealing process on the properties of the CuInS2 thin films were studied. The X-ray diffraction (XRD) analysis showed that well-crystallized films were deposited at a [Cu]/[In] ratio of 1.2 and a [S]/[In] ratio of 3. In order to improve the quality of the films, we explored various post-deposition annealing processes including furnace annealing in Ar, one-step sulfurization and two-step sulfurization. XRD and field emission scanning electron microscopy revealed that highly-crystallized grains were obtained in the films when two-step sulfurization was used. Energy dispersive X-ray analysis confirmed that two-step sulfurization in a H2S ambient eliminated the deficiency of sulfur and removed impurities such as oxygen and chlorine. The depth profiles of Cu, In and S for the CuInS2 films confirmed the effectiveness of two-step sulfurization for fabricating high quality CuInS2 films. Finally, deposition of high-quality CuInS2 films by using the AJD method could be achieved by the introduction of two-step sulfurization.
引用
收藏
页码:2007 / 2012
页数:6
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