Analysis and simulation of self-heating effects on RE LDMOS devices

被引：0

作者：

Belaïd, MA ^{[1
]}

Ketata, K ^{[1
]}

Maanane, H ^{[1
]}

Gares, M ^{[1
]}

Mourgues, K ^{[1
]}

Marcon, J ^{[1
]}

机构：

[1] Univ Rouen, IUT Rouen, LEMI, F-76821 Mont St Aignan, France

来源：

SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a study of the temperature and self heating effects on RF LDMOS devices. A new electro-thermal model is implemented in Agilent's ADS, using a Symbolic Defined Device (SDD). The proposed model takes into account the thermal effects and the influence of temperature on the I-V and C-V characteristics, by providing three thermal resistances and three thermal capacitances, which represent the heat flow from the chip to the ambient air (thermal network). The new model is thoroughly assessed against extensive 2-D simulations performed using a numerical device model. The results indicate a good agreement with all operating conditions.

引用

页码：231 / 234

页数：4

共 50 条

[41] Monte Carlo study of self-heating in nanoscale devices [J].

Toufik Sadi ;

Robert W. Kelsall ;

Neil J. Pilgrim ;

Jean-Luc Thobel ;

François Dessenne .

Journal of Computational Electronics, 2012, 11 :118-128

[42] Monte Carlo study of self-heating in nanoscale devices [J].

Sadi, Toufik ;

Kelsall, Robert W. ;

Pilgrim, Neil J. ;

Thobel, Jean-Luc ;

Dessenne, Francois .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2012, 11 (01) :118-128

[43] Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating [J].

Radhakrishna, Ujwal ;

DasGupta, Amitava ;

DasGupta, Nandita ;

Chakravorty, Anjan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) :4035-4041

[44] DC/HF circuit model for LDMOS including self-heating and quasi-saturation [J].

Canepari, A ;

Bertrand, G ;

Minondo, M ;

Jourdan, N ;

Chante, JP .

2005 PhD Research in Microelectronics and Electronics, Vols 1 and 2, Proceedings, 2005, :271-274

[45] Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI [J].

Leung, YK ;

Kuehne, SC ;

Huang, VSK ;

Nguyen, CT ;

Paul, AK ;

Plummer, JD ;

Wong, SS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (01) :13-15

[46] Modelling of high-voltage SOI-LDMOS transistors including self-heating [J].

Aarts, ACT ;

Swanenberg, MJ ;

Kloosterman, WJ .

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, :246-249

[47] Simulation of self-heating effects in 30nm gate length FinFET [J].

Braccioli, M. ;

Curatola, G. ;

Yang, Y. ;

Sangiorgi, E. ;

Fiegna, C. .

ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON, 2008, :71-+

[48] Microscopic Simulation of Electron Transport and Self-Heating Effects in InAs Nanowire MISFETs [J].

Sadi, Toufik ;

Thobel, Jean-Luc ;

Dessenne, Francois .

SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2010, :107-110

[49] Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS [J].

Cheng, Chih-Chang ;

Lin, J. F. ;

Wang, Tahui ;

Hsieh, T. H. ;

Tzeng, J. T. ;

Jong, Y. C. ;

Liou, R. S. ;

Pan, Samuel C. ;

Hsu, S. L. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :881-+

[50] Electro-Thermal Simulation of Graphene Nanoribbons Including Self-Heating Effects [J].

Pu, Pengfei ;

Tang, Min ;

Mao, Junfa .

2018 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT2018), 2018,

← 1 2 3 4 5 →