Negative-U hydrogen-containing center in silicon

被引：0
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作者：
Markevich, VP
Murin, LI
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来源：
SEMICONDUCTORS | 1996年 / 30卷 / 07期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown experimentally that one of the hydrogen-containing radiation defects in crystalline silicon possesses the properties of a center with negative correlation energy. It is established that this center is amphoteric with donor level E(0/+)=E(c)-0.043 eV lying above the acceptor level E(-/0)=E(c)-0.11 eV. (C) 1996 American Institute of Physics.
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页码：626 / 628
页数：3
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