Negative-U hydrogen-containing center in silicon

被引：0
|
作者：
Markevich, VP
Murin, LI
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown experimentally that one of the hydrogen-containing radiation defects in crystalline silicon possesses the properties of a center with negative correlation energy. It is established that this center is amphoteric with donor level E(0/+)=E(c)-0.043 eV lying above the acceptor level E(-/0)=E(c)-0.11 eV. (C) 1996 American Institute of Physics.
引用
收藏
页码：626 / 628
页数：3
相关论文
共 50 条
  • [1] ZN-RELATED CENTER IN SILICON - NEGATIVE-U PROPERTIES
    BAGRAEV, NT
    JOURNAL DE PHYSIQUE I, 1992, 2 (10): : 1907 - 1920
  • [2] NEGATIVE-U MODEL FOR THE VACANCY IN SILICON
    CHATTERJEE, AP
    WATKINS, GD
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (01): : 19 - 20
  • [3] Germanium negative-U center in GaAs
    Schmidt, TM
    Fazzio, A
    Caldas, MJ
    PHYSICAL REVIEW B, 1996, 53 (03): : 1315 - 1321
  • [4] On the hydrogen in hydrogen-containing amorphous silicon
    Hansen, Eddy Walther
    Kjekshus, Arne
    Odden, Jan Ove
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (28) : 2734 - 2743
  • [5] Germanium negative-U center in GaAs
    Phys Rev B, 3 (1315):
  • [6] O-IN GAP - A NEGATIVE-U CENTER
    KHOO, GS
    ONG, CK
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (23) : 3917 - 3924
  • [7] NEGATIVE-U PROPERTIES OF THE LATTICE VACANCY IN SILICON
    NEWTON, JL
    CHATTERJEE, AP
    HARRIS, RD
    WATKINS, GD
    PHYSICA B & C, 1983, 116 (1-3): : 219 - 223
  • [8] Hydrogen-containing donors in silicon: Centers with negative effective correlation energy
    Pokotilo, YM
    Petukh, AN
    Litvinov, VV
    Tsvyrko, VG
    SEMICONDUCTORS, 2005, 39 (07) : 768 - 771
  • [9] PHOSPHORUS VACANCY IN INP - A NEGATIVE-U CENTER
    ALATALO, M
    NIEMINEN, RM
    PUSKA, MJ
    SEITSONEN, AP
    VIRKKUNEN, R
    PHYSICAL REVIEW B, 1993, 47 (11): : 6381 - 6384
  • [10] Hydrogen-containing donors in silicon: Centers with negative effective correlation energy
    Yu. M. Pokotilo
    A. N. Petukh
    V. V. Litvinov
    V. G. Tsvyrko
    Semiconductors, 2005, 39 : 768 - 771
12345