Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

被引：17
作者：
Hong, RJ [1 ]
Shao, JD
He, HB
Fan, ZX
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Res & Dev Ctr Opt Thin Film Coatings, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 02期
关键词：
physical vapor deposition; oxides; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.01.047
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：334 / 337
页数：4
相关论文
共 21 条
  • [1] Pulsed laser deposition of ZnO thin films for applications of light emission
    Bae, SH
    Lee, SY
    Jin, BJ
    Im, S
    [J]. APPLIED SURFACE SCIENCE, 2000, 154 : 458 - 461
  • [2] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [3] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties
    Cebulla, R
    Wendt, R
    Ellmer, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 1087 - 1095
  • [4] ZnO as a novel photonic material for the UV region
    Chen, YF
    Bagnall, D
    Yao, TF
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 190 - 198
  • [5] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization
    Chen, YF
    Bagnall, DM
    Koh, HJ
    Park, KT
    Hiraga, K
    Zhu, ZQ
    Yao, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3912 - 3918
  • [6] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
    Cho, SL
    Ma, J
    Kim, YK
    Sun, Y
    Wong, GKL
    Ketterson, JB
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2761 - 2763
  • [7] Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102
  • [8] CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE
    FUJIMURA, N
    NISHIHARA, T
    GOTO, S
    XU, JF
    ITO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) : 269 - 279
  • [9] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [10] The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering
    Kim, KK
    Song, JH
    Jung, HJ
    Choi, WK
    Park, SJ
    Song, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3573 - 3575
123