In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

被引：15
作者：
Cao, Z. H.
Liu, P.
Meng, X. K. [1 ]
Tang, S. C.
Lu, H. M.
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 94卷 / 02期
基金：
中国国家自然科学基金;
关键词：
GERMANIUM FILMS; THIN-FILMS; SILICON; GROWTH; DIFFRACTION; SUBSTRATE; BILAYERS; ISLANDS; STRESS;
D O I：
10.1007/s00339-008-4818-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystallization of amorphous Ge films has been studied as a function of annealing temperature between 400 and 700 degrees C by in situ transmission electron microscopy (TEM). It is found that crystallization does not occur until the annealing temperature reaches 650 degrees C, which is nearly 250 degrees C higher than the crystallization temperature in previous reports. The high crystallization temperature and average crystal size obtained by in situ TEM are in agreement with those from Raman spectroscopy and X-ray diffraction measurement. The kinetics analysis indicates that homogeneous nucleation is the dominant crystallization mode and the activation energy is up to about 3.1 eV.
引用
收藏
页码：393 / 398
页数：6
相关论文
共 39 条
  • [1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS
    ADAMSKY, RF
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &
  • [2] OBSERVATIONS ON CRYSTALLINE TRANSFORMATION IN AMORPHOUS GE THIN-FILMS
    ALESSAND.EI
    KUPTSIS, JD
    GAMBINO, RJ
    [J]. THIN SOLID FILMS, 1972, 11 (02) : 415 - &
  • [3] BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1
  • [4] Cardona M., 1982, LIGHT SCATTERING SOL
  • [5] ANNEALING AND CRYSTALLIZATION OF AMORPHOUS-GERMANIUM THIN-FILMS
    CHIK, KP
    LIM, PK
    [J]. THIN SOLID FILMS, 1976, 35 (01) : 45 - 56
  • [6] Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing
    Choi, WK
    Ho, V
    Ng, V
    Ho, YW
    Ng, SP
    Chim, WK
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [7] FORMATION OF A-GE PARTICLES WITH NM DIMENSIONS AND THEIR BEHAVIOR DURING ANNEALING
    CZIGANY, Z
    RADNOCZI, G
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1994, 175 (2-3) : 228 - 237
  • [8] MORPHOLOGICAL INSTABILITY OF BILAYERS OF COPPER GERMANIDE FILMS AND AMORPHOUS-GERMANIUM
    DOYLE, JP
    SVENSSON, BG
    JOHANSSON, S
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2804 - 2806
  • [9] INITIAL CRYSTALLIZATION STAGE OF AMORPHOUS-GERMANIUM FILMS
    EDELMAN, F
    KOMEM, Y
    BENDAYAN, M
    BESERMAN, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5153 - 5157
  • [10] Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations
    Edler, Tobias
    Mayr, S. G.
    [J]. NEW JOURNAL OF PHYSICS, 2007, 9
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