Highly sensitive MOSFET gas sensors with porous platinum gate electrode

被引：30

作者：

Seo, H

Endoh, T

Fukuda, H

Nomura, S

机构：

[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 06期

关键词：

MOSFET; gas sensors;

D O I：

10.1049/el:19970327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel gas sensing devices based on a porous platinum (Pt) metaloxide-semiconductor field-effect transistor (MOSFET) have been fabricated. The catalytic properties of the porous Pt surface for hydrogen (H-2) enhance the gas detection sensitivity of the MOSFET gas sensor. The threshold voltage decreases rapidly as time increases when the device is exposed to H-2 gas. It was possible to detect 22ppm of H-2 gas with a response time of < 2min at a device temperature of 27 degrees C. The gas sensitivity could be enhanced to similar to 10 times higher than that of an unmodified Pt surface.

引用

页码：535 / 536

页数：2

共 6 条

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