Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD

被引：17
作者：
Wang, XL [1 ]
Wang, CM [1 ]
Hu, GX [1 ]
Wang, JX [1 ]
Li, JP [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1002/pssc.200564130
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm(2)/Vs and a two-dimensional electron gas (2DEG) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 Omega/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
引用
收藏
页码：607 / +
页数：2
相关论文
共 14 条
[1]   AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer [J].
Balmer, RS ;
Hilton, KP ;
Nash, KJ ;
Uren, MJ ;
Wallis, DJ ;
Wells, A ;
Missous, M ;
Martin, T .
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2331-2334
[2]   Fe doping for making resistive GaN layers with low dislocation density;: consequence on HEMTs [J].
Bougrioua, Z ;
Azize, M ;
Jimenez, A ;
Braña, AF ;
Lorenzini, P ;
Beaumont, B ;
Muñoz, E ;
Gibart, P .
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2424-2428
[3]   Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures [J].
Bougrioua, Z ;
Moerman, I ;
Nistor, L ;
Van Daele, B ;
Monroy, E ;
Palacios, T ;
Calle, F ;
Leroux, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01) :93-100
[4]   Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates [J].
Gaska, R ;
Yang, JW ;
Osinsky, A ;
Chen, Q ;
Khan, MA ;
Orlov, AO ;
Snider, GL ;
Shur, MS .
APPLIED PHYSICS LETTERS, 1998, 72 (06) :707-709
[5]   Cracks and dislocation structures in AlGaN systems [J].
Maksimov, IL ;
Li, HD ;
Sugahara, T ;
Tsukihara, M ;
Mori, A ;
Sakai, S .
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2432-2435
[6]   High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy [J].
Miyoshi, M ;
Ishikawa, H ;
Egawa, T ;
Asai, K ;
Mouri, M ;
Shibata, T ;
Tanaka, M ;
Oda, O .
APPLIED PHYSICS LETTERS, 2004, 85 (10) :1710-1712
[7]   AlGaN/AlN/GaN high-power microwave HEMT [J].
Shen, L ;
Heikman, S ;
Moran, B ;
Coffie, R ;
Zhang, NQ ;
Buttari, D ;
Smorchkova, IP ;
Keller, S ;
DenBaars, SP ;
Mishra, UK .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) :457-459
[8]   High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy [J].
Skierbiszewski, C ;
Dybko, K ;
Knap, W ;
Siekacz, M ;
Krupczynski, W ;
Nowak, G ;
Bockowski, M ;
Lusakowski, J ;
Wasilewski, ZR ;
Maude, D ;
Suski, T ;
Porowski, S .
APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3
[9]   Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy [J].
Skierbiszewski, C ;
Wasilewski, Z ;
Siekacz, M ;
Feduniewicz, A ;
Pastuszka, B ;
Grzegory, I ;
Leszczynski, M ;
Porowski, S .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (02) :320-323
[10]   AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy [J].
Smorchkova, IP ;
Chen, L ;
Mates, T ;
Shen, L ;
Heikman, S ;
Moran, B ;
Keller, S ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5196-5201
12