Impact electrical property of alkali metal doped ZnO

被引:3
作者
Tan, Honglin [1 ]
Jia, Congying [1 ]
Xiang, Chao [1 ]
Yang, Yingxiang [1 ]
机构
[1] Kunming Univ Sci & Technol, Coll Mat Sci & Engn, Kunming 650093, Peoples R China
来源
AUTOMATION EQUIPMENT AND SYSTEMS, PTS 1-4 | 2012年 / 468-471卷
关键词
first-principles; alkali metal ion doped ZnO; band structure; density of sates (DOS);
D O I
10.4028/www.scientific.net/AMR.468-471.1501
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave ultra-soft pseudo-potential method. Analyze the band structure of alkali metal ion-doped ZnO crystal, and the electronic density of states. The results indicated that in theory, the doping of alkali metal ions are able to form a p-type ZnO semiconductor, and introduce in the deep acceptor levels. In the actual substitution process, the dopant ions may enter the interstitial site. Thus the alkali metal ions are tending to become donor interstitial impurities. In addition, since the ionic radius of K is larger than the ionic radiuses of Li and Na. And K+ formed the minimum acceptor level (0.078eV), which is a shallow acceptor level. K+ is better than Li+ and Na+ as a dopant. In short, they are not good p-type dopants.
引用
收藏
页码:1501 / 1507
页数:7
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