The thermal conductivity of SiGe heterostructure nanowires with different cores and shells

被引：13

作者：

Bi, Kedong ^{[1
]}

Wang, Jianqiang ^{[1
]}

Wang, Yujuan ^{[1
]}

Sha, Jingjie ^{[1
]}

Wang, Zan ^{[2
]}

Chen, Minhua ^{[1
]}

Chen, Yunfei ^{[1
]}

机构：

[1] Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Manufacture Micronano Bi, Nanjing 211189, Jiangsu, Peoples R China

[2] Henan Univ Technol, Sch Mech & Elect Engn, Zhengzhou 450001, Peoples R China

来源：

PHYSICS LETTERS A | 2012年 / 376卷 / 40-41期

关键词：

Nanowires; Core-shell; Thermal conductivity; Molecular dynamics; SILICON NANOWIRES; PERFORMANCE; SIMULATION;

D O I：

10.1016/j.physleta.2012.07.004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Non-equilibrium molecular dynamics (NEMD) simulation is performed to investigate thermal conductivities of two kinds of SiGe heterostructure nanowires (NWs), core(Si)/shell(Ge) and core(Ge)/(Si) NWs, using different interaction potentials between core and shell atoms. The influence of the proportion of core particles on the overall thermal conductivity of NWs is studied as well. Simulation results demonstrate that thermal conductivities of each kind of NWs with strong potential between core and shell atoms are higher than those of their counterparts with weak interaction between Si and Ge atoms. It is also found that thermal conductivities of both kinds of Si/Ge heterostructure NWs reduce with the decrease of the proportion of core atoms when the shell is not very thick. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2668 / 2671

页数：4

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