Defect structures of AIN on sapphire(0001) grown by metalorganic vapor-phase epitaxy with different preflow sources

被引：18
|
作者：
Kawaguchi, K [1 ]
Kuramata, A [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 46-49期
关键词：
AIN; sapphire; metalorganic vapor-phase epitaxy; dislocations; domains;
D O I：
10.1143/JJAP.44.L1400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two types of AlN defect structures directly grown on sapphire (0001) by metalorganic vapor-phase epitaxy with different initial growth sequences were studied. One was a domain structure with arrays of threading edge dislocations aligned along the [1-210] direction, observed in AlN with NH3 preflow. The other was threading dislocations with screw components located randomly, observed in AlN with TMA preflow. It was also confirmed that threading dislocations caused the surface depression of AlN. A model for the formation of domain structures based on the geometrical aspects and dislocation types is proposed.
引用
收藏
页码：L1400 / L1402
页数：3
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