N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band

被引：44

作者：

Bucio, Thalia Dominguez ^{[1
]}

Khokhar, Ali Z. ^{[1
]}

Mashanovich, Goran Z. ^{[1
]}

Gardes, Frederic Y. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

OPTICS LETTERS | 2018年 / 43卷 / 06期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

WAVE-GUIDES; SI3N4;

D O I：

10.1364/OL.43.001251

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n = 1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Delta lambda = 20 nm, BW3dB similar to 11 nm, IL < 1.5 dB, and XT similar to 20 dB. Additionally, it showed a high tolerance to dimensional errors < 120 pm/nm and low sensitivity to temperature variations < 20 pm/degrees C, respectively. This device had a footprint of 0.02 mm x 1.7 mmwith the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400 degrees C.

引用

页码：1251 / 1254

页数：4

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