Hybrid Integration of Broadband Silicon Modulators and InGaAs Photodetectors

被引：0
作者：
Karaca, Utku [1 ]
Govdeli, Alperen [1 ]
Kocaman, Serdar [1 ]
机构：
[1] Middle East Tech Univ, Ankara, Turkey
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present on-chip integration of silicon modulators and InGaAs photodetectors via flip-chip bonding. Modulators fabricated on silicon-on-insulator (SOI) and photodetectors grown on InP wafers were fabricated independently and the hybrid integration was achieved by the deposition of indium (In) bumps on both sides.
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页数：2
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