Hybrid Integration of Broadband Silicon Modulators and InGaAs Photodetectors

被引：0

作者：

Karaca, Utku ^{[1
]}

Govdeli, Alperen ^{[1
]}

Kocaman, Serdar ^{[1
]}

机构：

[1] Middle East Tech Univ, Ankara, Turkey

来源：

2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present on-chip integration of silicon modulators and InGaAs photodetectors via flip-chip bonding. Modulators fabricated on silicon-on-insulator (SOI) and photodetectors grown on InP wafers were fabricated independently and the hybrid integration was achieved by the deposition of indium (In) bumps on both sides.

引用

页数：2

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