Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon-rich silicon oxide

被引：24

作者：

Buckwell, Mark ^{[1
]}

Montesi, Luca ^{[1
]}

Mehonic, Adnan ^{[1
]}

Reza, Omer ^{[1
]}

Garnett, Leon ^{[1
]}

Munde, Manveer ^{[1
]}

Hudziak, Stephen ^{[1
]}

Kenyon, Anthony J. ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2 | 2015年 / 12卷 / 1-2期

关键词：

resistive switching; silicon; bubbles; deformation; X-ray photoelectron spectroscopy; atomic force microscopy; MEMORY DEVICES; FILAMENT; STATE; SIO;

D O I：

10.1002/pssc.201400160

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Redox-based resistive random access memory (RRAM) has the scope to greatly improve upon current methods of data storage, despite incomplete understandings of material switching mechanisms. We make use of atomic force microscopy (AFM), conductive atomic force microscopy (cAFM) and X-ray photoelectron spectroscopy (XPS) to characterise the physical processes occurring in the changes in conductance state in silicon-rich silicon oxide RRAM. Surface analyses of the insulating oxide layer of our devices are employed to establish the chemical and structural properties of pristine and switched states. The removal of oxygen from the active layer is observed to be concomitant with the appearance of varying degrees of surface distortion and regions of high conductivity in an otherwise-insulating material. These results support the currently-recognised model of a resistive switching mechanism that is reliant upon the migration of oxygen ions under an electrical bias. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：211 / 217

页数：7

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