Fano-Kondo and the Kondo box regimes crossover in a quantum dot coupled to a quantum box

被引:1
作者
Apel, Victor M. [1 ]
Orellana, Pedro A. [2 ]
Pacheco, Monica [2 ]
Anda, Enrique V. [3 ]
机构
[1] Univ Catolica Norte, Dept Fis, Antofagasta, Chile
[2] Univ Tecn Federico Santa Maria, Dept Fis, Valparaiso, Chile
[3] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-38071970 Rio De Janeiro, RJ, Brazil
关键词
SINGLE-ELECTRON TRANSISTOR; SHOT-NOISE; IMPURITY;
D O I
10.1088/0953-8984/25/50/505601
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we study the Kondo effect of a quantum dot (QD) connected to leads and to a discrete set of one-particle states provided by a quantum box represented by a quantum ring (QR) pierced by a magnetic flux side attached to the QD. The interplay between the bulk Kondo effect and the so-called Kondo box regime is studied. In this system the QR energies can be continuously modified by the application of the magnetic field. The crossover between these two regimes is analyzed by changing the connection of the QD to the QR from the weak to the strong coupling regime. In the weak coupling regime, the differential conductance develops a sequence of Fano-Kondo anti-resonances due to destructive interference between the discrete quantum ring levels and the conducting Kondo channel provided by the leads. In the strong coupling regime the differential conductance has very sharp resonances when one of the Kondo discrete sub-levels characterizing the Kondo box is tuned by the applied potential. The conductance, the current fluctuations and the Fano coefficient result as being the relevant physical magnitudes to be analyzed to reveal the physical properties of these two Kondo regimes and the crossover region between them. The results were obtained by using the slave boson mean field theory (SBMFT).
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页数:8
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