Magneto-ionic effect in CoFeB thin films with in-plane and perpendicular-to-plane magnetic anisotropy

被引：22

作者：

Baldrati, L. ^{[1
,2
]}

Tan, A. J. ^{[2
]}

Mann, M. ^{[2
]}

Bertacco, R. ^{[1
,3
]}

Beach, G. S. D. ^{[2
]}

机构：

[1] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] CNR, IFN, I-20133 Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 01期

关键词：

Optical Kerr effect - Gadolinium compounds - Ultrathin films - Iron compounds - Magnetos - Cobalt compounds - Electric fields - Oxide films - Magnetism;

D O I：

10.1063/1.4973475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magneto-ionic effect is a promising method to control the magnetic properties electrically. Charged mobile oxygen ions can easily be driven by an electric field to modify the magnetic anisotropy of a ferromagnetic layer in contact with an ionic conductor in a solid-state device. In this paper, we report on the room temperature magneto-ionic modulation of the magnetic anisotropy of ultrathin CoFeB films in contact with a GdOx layer, as probed by polar micro-Magneto Optical Kerr Effect during the application of a voltage across patterned capacitors. Both Pt/CoFeB/ GdOx films with perpendicular magnetic anisotropy and Ta/CoFeB/GdOx films with uniaxial in-plane magnetic anisotropy in the as-grown state exhibit a sizable dependence of the magnetic anisotropy on the voltage (amplitude, polarity, and time) applied across the oxide. In Pt/CoFeB/ GdOx multilayers, it is possible to reorient the magnetic anisotropy from perpendicular-to-plane to in-plane, with a variation of the magnetic anisotropy energy greater than 0.2 mJ m(-2). As for Ta/CoFeB/GdOx multilayers, magneto-ionic effects still lead to a sizable variation of the in-plane magnetic anisotropy, but the anisotropy axis remains in-plane. Published by AIP Publishing.

引用

页数：5

共 28 条

[1]

Albisetti E, 2016, NAT NANOTECHNOL, V11, P545, DOI [10.1038/NNANO.2016.25, 10.1038/nnano.2016.25]

[2] Electric field control of magnetic properties and electron transport in BaTiO3-based multiferroic heterostructures [J].

Asa, M. ;

Baldrati, L. ;

Rinaldi, C. ;

Bertoli, S. ;

Radaelli, G. ;

Cantoni, M. ;

Bertacco, R. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (50)

[3] Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3 [J].

Baldrati, Lorenzo ;

Rinaldi, Christian ;

Manuzzi, Alberto ;

Asa, Marco ;

Aballe, Lucia ;

Foerster, Michael ;

Biskup, Neven ;

Varela, Maria ;

Cantoni, Matteo ;

Bertacco, Riccardo .

ADVANCED ELECTRONIC MATERIALS, 2016, 2 (07)

[4]

Bauer U, 2015, NAT MATER, V14, P174, DOI [10.1038/NMAT4134, 10.1038/nmat4134]

[5]

Bauer U, 2013, NAT NANOTECHNOL, V8, P411, DOI [10.1038/nnano.2013.96, 10.1038/NNANO.2013.96]

[6] Electric field control of domain wall propagation in Pt/Co/GdOx films [J].

Bauer, Uwe ;

Emori, Satoru ;

Beach, Geoffrey S. D. .

APPLIED PHYSICS LETTERS, 2012, 100 (19)

[7] Reversible Control of Co Magnetism by Voltage-Induced Oxidation [J].

Bi, Chong ;

Liu, Yaohua ;

Newhouse-Illige, T. ;

Xu, M. ;

Rosales, M. ;

Freeland, J. W. ;

Mryasov, Oleg ;

Zhang, Shufeng ;

te Velthuis, S. G. E. ;

Wang, W. G. .

PHYSICAL REVIEW LETTERS, 2014, 113 (26)

[8] Multiferroics:: Towards a magnetoelectric memory [J].

Bibes, Manuel ;

Barthelemy, Agnes .

NATURE MATERIALS, 2008, 7 (06) :425-426

[9] Nanoferronics is a winning combination [J].

Bibes, Manuel .

NATURE MATERIALS, 2012, 11 (05) :354-357

[10] The emergence of spin electronics in data storage [J].

Chappert, Claude ;

Fert, Albert ;

Van Dau, Frederic Nguyen .

NATURE MATERIALS, 2007, 6 (11) :813-823

← 1 2 3 →