Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：1
作者：
Chang, Sheng-Po [1 ,2 ]
Yang, Tsung-Han [1 ,2 ]
Ho, Chao-Jen [3 ]
Chang, Shoou-Jinn [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Ind Technol Res Inst, Dept Eco Sensor Devices & Ceram Mat, Mat & Chem Res Labs, Taipei 301, Taiwan
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2013年 / 8卷 / 04期
关键词：
a-IGZO; Thin Film Transistors (TFT); Threshold Voltage (V-T); Amorphous; Oxygen; SEMICONDUCTORS;
D O I：
10.1166/jno.2013.1479
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report on the fabrication and the electrical characteristics of thin-film transistors (TFTs) with an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which was deposited by sputtering using an IGZO target at different oxygen partial pressures. The effect of different oxygen concentration on the device performance of a-IGZO TFTs was investigated. With decreasing zinc and increasing oxygen content, the threshold voltage (V-T) shifted in the positive direction. Such a positive V-T shift suggests that the number of oxygen vacancies in the a-IGZO film decreased. The subthreshold swing degrades due to an increasing tailing of trap states. At a relatively high IGZO power of 110 W and an oxygen flow rate of 4%, a threshold voltage of 1.8 V, an on-off current ratio of 3.4 x 10(4), and a field-effect mobility of 4.4 cm(2)/(Vs) were observed.
引用
收藏
页码：361 / 365
页数：5
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