Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)

被引：1
|
作者：
Chua, C. L. [1 ]
Woon, K. L. [1 ]
机构：
[1] Univ Malaya, Fac Sci, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
来源：
MATERIALS SCIENCE-POLAND | 2013年 / 31卷 / 03期
关键词：
organic field effect transistor; regioregular poly(3-hexylthiophene); solvent annealing; thermal annealing; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); MOBILITY; TRANSPORT; ELECTRON; POLYMER;
D O I：
10.2478/s13536-013-0108-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular poly(3-hexylthiophene) (RR P3HT) is investigated in this paper. It is found that different processing conditions can induce different degrees of hysteresis, which is well correlated with the charge mobility where lower hysteresis represents higher stability and hence higher charge mobility. Solvent annealing tends to create large nano-scale pinholes in P3HT which degrade the mobility.
引用
收藏
页码：325 / 330
页数：6
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