Evidence of the Reverse Intersystem Crossing in Intra-Molecular Charge-Transfer Fluorescence-Based Organic Light-Emitting Devices Through Magneto-Electroluminescence Measurements

被引：94

作者：

Peng, Qiming ^{[1
]}

Li, Weijun ^{[1
]}

Zhang, Shitong ^{[1
]}

Chen, Ping ^{[1
]}

Li, Feng ^{[1
]}

Ma, Yuguang ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

来源：

ADVANCED OPTICAL MATERIALS | 2013年 / 1卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ACTIVATED DELAYED FLUORESCENCE; DIODES; SEMICONDUCTORS; COMPLEXES; MECHANISM; CRYSTALS; SINGLET; STATES;

D O I：

10.1002/adom.201300028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental evidence for reverse intersystem crossing (RISC) in organic light-emitting devices with small energy gaps between the singlet and triplet excited states is given using the magnetic field effect (MFE) on the electroluminescence (EL) of the devices. The EL decreases when an external magnetic field is applied, indicating that the RISC process occurs and promotes the exciton in the device. The MFE could be a good tool for exploring physical processes in organic semiconductors, especially when spin effects are involved. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：362 / 366

页数：5

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