Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

被引:23
作者
Liu, Xuejie [1 ]
Lu, Pengfei [1 ]
Wang, Hongchao [1 ]
Ren, Yuan [1 ]
Tan, Xin [1 ]
Sun, Shiyang [1 ]
Jia, Huiling [1 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Mech Engn, Baotou 014010, Inner Mongolia, Peoples R China
基金
中国国家自然科学基金;
关键词
Ti-doped diamond films; Microwave plasma chemical vapor deposition (MPCVD); Microstructure; Secondary nucleation; Preferred orientation; DLC FILMS; THIN-FILMS; TRIBOLOGICAL PERFORMANCE; NANOCOMPOSITE COATINGS; RAMAN-SPECTROSCOPY; CARBON-FILMS; BIAS VOLTAGE; SURFACE; GROWTH; CVD;
D O I
10.1016/j.apsusc.2018.02.180
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (110) faceted grains. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:529 / 536
页数:8
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