On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

被引：21
作者：
Simoen, Eddy [1 ]
Veloso, Anabela [1 ]
Higuchi, Yuichi [2 ]
Horiguchi, Naoto [1 ]
Claeys, Cor [1 ,3 ]
机构：
[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium
[2] Panasonic, B-3001 Louvain, Belgium
[3] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 11期
关键词：
Flicker noise; high-k (HK) gate dielectrics; low-frequency (LF) noise; oxide trap density; tunneling; 1/F NOISE; TUNNELING CURRENTS; INTERFACIAL LAYER; P-MOSFETS; N-MOSFETS; IMPACT; HFO2; PERFORMANCE; NMOSFETS; BEHAVIOR;
D O I：
10.1109/TED.2013.2279892
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs with an equivalent oxide thickness of the SiO2/HfO2 bilayer in the range similar to 1 nm has been investigated. It will be shown that both the average trap density and its profile derived from the frequency exponent. of the flicker noise spectra are mainly determined by the interfacial layer (IL) oxide processing, with a higher trap density corresponding with a thinner chemical oxide, compared with a <= 1-nm thermal SiO2 IL. The thickness of the HfO2 layer and the metal gate fill has only a marginal impact on the noise power spectral density. It will also be shown that for the extraction of the trap density profiles from the 1/f(gamma). noise spectra accurate values for the tunneling effective mass and barrier height are required.
引用
收藏
页码：3849 / 3855
页数：7
相关论文
共 45 条
[1]   Random Telegraph Noise in Highly Scaled nMOSFETs [J].
Campbell, J. P. ;
Qin, J. ;
Cheung, K. P. ;
Yu, L. C. ;
Suehle, J. S. ;
Oates, A. ;
Sheng, K. .
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, :382-+
[2]   Modeling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters [J].
Campera, Andrea ;
Iannaccone, Giuseppe ;
Crupi, Felice .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (01) :83-89
[3]   STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J].
CELIK, Z ;
HSIANG, TY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2797-2802
[4]   Statistical Characterization and Modeling of the Temporal Evolutions of ΔVt Distribution in NBTI Recovery in Nanometer MOSFETs [J].
Chiu, Jung-Piao ;
Liu, Yu-Heng ;
Hsieh, Hung-Da ;
Li, Chi-Wei ;
Chen, Min-Cheng ;
Wang, Tahui .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (03) :978-984
[5]   Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors [J].
Claeys, C. ;
Simoen, E. ;
Srinivasan, P. ;
Misra, D. .
SOLID-STATE ELECTRONICS, 2007, 51 (04) :627-632
[6]   Low-frequency noise performance of HfO2-based gate stacks [J].
Claeys, C ;
Simoen, E ;
Mercha, A ;
Pantisano, L ;
Young, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (09) :F115-F123
[7]   Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks [J].
Crupi, F. ;
Srinivasan, P. ;
Magnone, P. ;
Simoen, E. ;
Pace, C. ;
Misra, D. ;
Claeys, C. .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (08) :688-691
[8]   Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric [J].
Devireddy, Siva Prasad ;
Min, Bigang ;
Celik-Butler, Zeynep ;
Tseng, Hsing-Huang ;
Tobin, Philip J. ;
Zlotnicka, Ania .
MICROELECTRONICS RELIABILITY, 2007, 47 (08) :1228-1232
[9]   Low-frequency noise in TaSiN/HfO2 nMOSFETs and the effect of stress-relieved preoxide interfacial layer [J].
Devireddy, SP ;
Min, B ;
Celik-Butler, Z ;
Tseng, HH ;
Tobin, PJ ;
Wang, F ;
Zlotnicka, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :538-544
[10]   THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J].
FU, HS ;
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :273-+
12345