Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

被引：13

作者：

Hsu, Fang-Ze ^{[1
]}

Wu, Jau-Yang ^{[1
]}

Lin, Sheng-Di ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

OPTICS LETTERS | 2013年 / 38卷 / 01期

关键词：

Dark count rate - High voltage CMOS - Imaging applications - Low costs - Single photon avalanche diode - Single-photon detectors - SPAD array - Technology customization;

D O I：

10.1364/OL.38.000055

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By using 0.25 mu m high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications. (C) 2012 Optical Society of America

引用

页码：55 / 57

页数：3

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