The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

被引：44
作者：
Hughart, D. R. [1 ]
Schrimpf, R. D. [1 ]
Fleetwood, D. M. [1 ]
Rowsey, N. L. [2 ]
Law, M. E. [2 ]
Tuttle, B. R. [3 ]
Pantelides, S. T. [3 ]
机构：
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期
关键词：
Annealing; elevated temperature irradiation; hydrogen; interface traps; low dose rate; radiation effects; BIPOLAR JUNCTION TRANSISTORS; DOSE-RATE SENSITIVITY; HARDNESS-ASSURANCE; GAIN DEGRADATION; LINEAR CIRCUITS; RATE RESPONSE; MECHANISMS; OXIDES; HYDROGEN; DEVICES;
D O I：
10.1109/TNS.2012.2220982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H-2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.
引用
收藏
页码：3087 / 3092
页数：6
相关论文
共 29 条
[1]   Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors [J].
Ball, DR ;
Schrimpf, RD ;
Barnaby, HJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :3185-3190
[2]   Evaluation of accelerated total dose testing of linear bipolar circuits [J].
Carrière, T ;
Ecoffet, R ;
Poirot, P .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2350-2357
[3]   Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides [J].
Chen, X. J. ;
Barnaby, H. J. ;
Vermeire, B. ;
Holbert, K. ;
Wright, D. ;
Pease, R. L. ;
Dunham, G. ;
Platteter, D. G. ;
Seiler, J. ;
McClure, S. ;
Adell, P. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :1913-1919
[4]   Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides [J].
Chen, X. Jie ;
Barnaby, Hugh J. ;
Vertneire, Bert ;
Holbert, Keith E. ;
Wright, David ;
Pease, Ronald L. ;
Schrimpf, Ronald D. ;
Fleetwood, Daniel M. ;
Pantelides, Sokrates T. ;
Shaneyfelt, Marty R. ;
Adell, Philippe .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) :3032-3038
[5]   OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI [J].
CONLEY, JF ;
LENAHAN, PM ;
EVANS, HL ;
LOWRY, RK ;
MORTHORST, TJ .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2281-2283
[6]   Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices [J].
Fleetwood, Daniel M. ;
Schrimpf, Ronald D. ;
Pantelides, Sokrates T. ;
Pease, Ronald L. ;
Dunham, Gary W. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) :2986-2991
[7]   PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATION AT LOW-DOSE RATES [J].
FLEETWOOD, DM ;
KOSIER, SL ;
NOWLIN, RN ;
SCHRIMPF, RD ;
REBER, RA ;
DELAUS, M ;
WINOKUR, PS ;
WEI, A ;
COMBS, WE ;
PEASE, RL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1871-1883
[8]   Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors [J].
Hjalmarson, Harold P. ;
Pease, Ronald L. ;
Devine, Roderick A. B. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) :3009-3015
[9]   Mechanisms for radiation dose-rate sensitivity of bipolar transistors [J].
Hjalmarson, HP ;
Pease, RL ;
Witczak, SC ;
Shaneyfelt, MR ;
Schwank, JR ;
Edwards, AH ;
Hembree, CE ;
Mattsson, TR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :1901-1909
[10]   Mechanisms of Interface Trap Buildup and Annealing During Elevated Temperature Irradiation [J].
Hughart, D. R. ;
Schrimpf, R. D. ;
Fleetwood, D. M. ;
Tuttle, B. R. ;
Pantelides, S. T. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) :2930-2936
123