Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2O3

被引:14
作者
Cornagliotti, Emanuele [1 ]
Uruena, Angel [1 ]
Aleman, Monica [1 ]
Sharma, Aashish [1 ]
Tous, Loic [1 ]
Russell, Richard [1 ]
Choulat, Patrick [1 ]
Chen, Jia [1 ]
John, Joachim [1 ]
Haslinger, Michael [1 ]
Duerinckx, Filip [1 ]
Dielissen, Bas [2 ]
Goertzen, Roger [2 ]
Black, Lachlan [3 ]
Szlufcik, Jozef [1 ]
机构
[1] IMEC, B-3001 Leuven, Belgium
[2] Solaytec, NL-5652 AM Eindhoven, Netherlands
[3] Australian Natl Univ, Ctr Sustainable Energy Syst, Canberra, ACT 0200, Australia
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期
关键词
Atomic layer deposition (ALD) Al2O3; Cu-plating; n-PERT cell; SURFACE PASSIVATION; P-TYPE; LAYERS; RECOMBINATION; REGENERATION; TEMPERATURE; DEPOSITION; CONTACTS; DEFECTS;
D O I
10.1109/JPHOTOV.2015.2458041
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm(2), provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3/SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and V-oc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.
引用
收藏
页码:1366 / 1372
页数:7
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