Interactive OPC simulator for memory devices

被引：0

作者：

Inui, H ^{[1
]}

Iwasaki, H ^{[1
]}

Ohta, T ^{[1
]}

Tanabe, H ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

PHOTOMASK AND X-RAY MASK TECHNOLOGY VI | 1999年 / 3748卷

关键词：

lithography; optical proximity correction; OPC; chemically amplified resist; parameter extraction; memory device;

D O I：

10.1117/12.360195

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The practical OPC simulation system suitable for memory devices is developed with a simple threshold model considering acid diffusion in chemically amplified resists. And the resist parameter extraction method is also presented. The simulation performance is within 0.01 mu m CD error, and within a few second computation time for 4 mu m(2) area memory cell on a EWS.

引用

页码：233 / 240

页数：6

共 5 条

[1] Approximate models for resist processing effects [J].

Brunner, TA ;

Ferguson, RA .

OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 :198-207

[2] A practical 3D lithography simulation system [J].

Inui, H ;

Kaneko, H ;

Tounai, K ;

Tanabe, H ;

Ohta, T .

OPTICAL MICROLITHOGRAPHY X, 1997, 3051 :522-528

[3]

INUI H, 1998, 45 SPRING M JAP SOC

[4]

LUCAS KD, 1996, ACCURATE CHIP SCALE, P159

[5] PHASE-SHIFTING MASKS FOR MICROLITHOGRAPHY - AUTOMATED DESIGN AND MASK REQUIREMENTS [J].

PATI, YC ;

KAILATH, T .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1994, 11 (09) :2438-2452

← 1 →