1000V Vertical JFET Using Bulk GaN

被引：2

作者：

Diduck, Q. ^{[1
]}

Nie, H. ^{[1
]}

Alvarez, B. ^{[1
]}

Edwards, A. ^{[1
]}

Bour, D. ^{[1
]}

Aktas, O. ^{[1
]}

Disney, D. ^{[1
]}

Kizilyalli, I. C. ^{[1
]}

机构：

[1] Avogy Inc, San Jose, CA 95134 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 | 2013年 / 58卷 / 04期

关键词：

D O I：

10.1149/05804.0295ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bulk GaN substrates with low defect density are now commercially available. This material enables the fabrication of vertical GaN devices with high breakdown voltage, and excellent electrical performance and power device figure of merit. In this paper, we present a 1000V Vertical JFET that has a positive threshold of 1V. The normally-off FET integrates a heterojunction in the design to improve the transconductance and enable efficient switching operation into the 10s of MHz.

引用

页码：295 / 298

页数：4

共 5 条

[1] 6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process [J].

Balachandran, Santosh ;

Li, C. ;

Losee, P. A. ;

Bhat, I. B. ;

Chow, T. P. .

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, :293-+

[2]

Furukawa A, 2011, PROC INT SYMP POWER, P288, DOI 10.1109/ISPSD.2011.5890847

[3]

Nakamura T., 2011, IEDM

[4]

Quay R, 2008, SPRINGER SER MATER S, V96, P1

[5]

Sheridan D., 2009, J P INT S POW SEM IS, P335

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