Comparative study of wet sulfur passivation process on GaSb (100) surface

被引：1

作者：

Kumar, Satish ^{[1
,2
]}

Kumari, Soni ^{[1
]}

Jangir, S. K. ^{[1
]}

Pandey, R. K. ^{[1
]}

Goyal, Anshu ^{[1
]}

Upadhyay, Garima ^{[1
]}

Mishra, Puspashree ^{[1
]}

Srinivasan, T. ^{[1
]}

Mahapatro, Ajit K. ^{[2
]}

机构：

[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

[2] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

来源：

INTEGRATED FERROELECTRICS | 2018年 / 186卷 / 01期

关键词：

Gallium antimonide; surface passivation; molecular beam epitaxy; CHEMICAL PASSIVATION; GALLIUM ANTIMONIDE; PHOTOLUMINESCENCE;

D O I：

10.1080/10584587.2017.1369773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study for the pristine and sulfur passivated surfaces of gallium antimonide (GaSb) grown using molecular beam epitaxy is presented with the results recorded through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) techniques. The as-grown GaSb surfaces were treated separately with 20% aqueous ammonium sulphide, ((NH4)(2)S), at 60 degrees C for 10 m, aqueous sodium sulfide nonahydrate (Na2S center dot 9H(2)O) with molarity 1 for 4 m at room temperature and base- thioacetamide (base-TAM) with molarity 0.18 for 40 m at 70 degrees C. AFM topography shows the formation of very clean and flat surface for base- TAM treated GaSb. XPS results reveal lowest concentration of Ga(2)O(3)for GaSb surface treated with base-TAM.

引用

页码：77 / 83

页数：7

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