Broad bandwidth transformer coupled differential amplifiers for high dynamic range

被引：18

作者：

Meharry, DE ^{[1
]}

Sanctuary, JE ^{[1
]}

Golja, BA ^{[1
]}

机构：

[1] Sanders, Nashua, NH 03061 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 09期

关键词：

baluns; broad-band amplifiers; differential amplifiers; intermodulation distortion; microwave amplifiers; monolithic microwave integrated circuits (MMIC's); pseudomorphic high electron mobility transistors (PHEMT's);

D O I：

10.1109/4.782081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad bandwidth amplifiers are typically limited in their spurious free dynamic range by second-order products. We have demonstrated more than 30 dB reduction in second-order products for amplifiers with 1-2 octaves of bandwidth utilizing a novel circuit approach. Improved planar baluns (180 degrees transformers) are combined with differential amplifiers fabricated from 0.25-mu m GaAs pseudomorphic high electron mobility transistors to implement 4-16-GHz and 3-6-GHz small-signal amplifiers. Measured values of OIP2 exceed 60 dBm with a 1-dB compression level of approximately 5 dBm, These unprecedented levels enable miniaturized, low-power front ends for broad bandwidth microwave systems.

引用

页码：1233 / 1238

页数：6