Improvement in resistive switching of Ba-doped BiFeO3 films

被引：59

作者：

Vagadia, Megha ^{[1
]}

Ravalia, Ashish ^{[1
]}

Solanki, P. S. ^{[1
]}

Choudhary, R. J. ^{[2
]}

Phase, D. M. ^{[2
]}

Kuberkar, D. G. ^{[1
]}

机构：

[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India

[2] UGC DAE Consortium Sci Res, Indore 01, Madhya Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; P-N;

D O I：

10.1063/1.4813551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the resistive switching behavior of Ba-doped BiFeO3 (BBFO) films grown on single crystalline SrTi0.99Nb0.01O3 substrates. Observation of diode like I-V behavior and reduction in V-C with Ba-content in BBFO films have been understood in the context of modifications in its energy band diagram. Also, I-V curves exhibit hysteresis which has been explained on the basis of migration and recombination of oxygen vacancies under field conditions. Furthermore, increment in Ba-content improves the retention property and ON/OFF switching ratio in BFO films which makes them suitable for applications in switching devices. (C) 2013 AIP Publishing LLC.

引用

页数：5

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