On the off-Bragg reflectivity enhancement in dynamical multiple diffraction of x-rays by an In0.5Ga0.5P/GaAs heteroepitaxial structure

被引：2
作者：
Kovalchuk, MV
Kreines, AY
Samoilova, LV
Melnikov, AM
机构：
[1] A. V. Shubnikov Inst. of Cristal., Russian Academy of Sciences, 117333 Moscow
来源：
JOURNAL OF SYNCHROTRON RADIATION | 1997年 / 4卷
关键词：
dynamical diffraction; multiple diffraction; heterostructures;
D O I：
10.1107/S0909049597001453
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In0.5Ga0.5P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger-like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron-radiation-based studies are discussed.
引用
收藏
页码：180 / 184
页数：5
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