Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

被引：95

作者：

Wang, X. L. ^{[1
,2
]}

Luan, C. Y. ^{[1
,2
,3
]}

Shao, Q. ^{[1
,2
]}

Pruna, A. ^{[1
,2
]}

Leung, C. W. ^{[4
,5
]}

Lortz, R. ^{[6
]}

Zapien, J. A. ^{[1
,2
,3
]}

Ruotolo, A. ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Ctr Funct Photon CFP, Kowloon, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Kowloon, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[5] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

[6] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

关键词：

ENERGY-GAP; FERROMAGNETISM; NANOCRYSTALS; ZN1-XMNXO; EXCHANGE; OXIDE;

D O I：

10.1063/1.4795797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795797]

引用

页数：4

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