Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

被引：95
|
作者：
Wang, X. L. [1 ,2 ]
Luan, C. Y. [1 ,2 ,3 ]
Shao, Q. [1 ,2 ]
Pruna, A. [1 ,2 ]
Leung, C. W. [4 ,5 ]
Lortz, R. [6 ]
Zapien, J. A. [1 ,2 ,3 ]
Ruotolo, A. [1 ,2 ]
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Ctr Funct Photon CFP, Kowloon, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Kowloon, Hong Kong, Peoples R China
[4] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[5] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
[6] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期
关键词：
ENERGY-GAP; FERROMAGNETISM; NANOCRYSTALS; ZN1-XMNXO; EXCHANGE; OXIDE;
D O I：
10.1063/1.4795797
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795797]
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页数：4
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