Photonic microdisk resonators in aluminum nitride

被引：14

作者：

Ghosh, Siddhartha ^{[1
]}

Piazza, Gianluca ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 01期

基金：

美国国家科学基金会;

关键词：

SILICON; RING; FILMS;

D O I：

10.1063/1.4772601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate integrated photonic microdisk resonators in sputtered c-axis oriented aluminum nitride (AlN) films. A 400nm thick layer of AlN was patterned in a single lithography step with silicon dioxide used for the top and bottom cladding layers. AlN disks with a radius of 20 mu m at various spacings to an 850 nm wide waveguide were tested. A loaded quality factor of 28 350 is shown in these microdisks, with an extracted peak shift over power ratio of 0.0495 pm/mu W. The demonstration of photonic resonators in a piezoelectric material can lead to novel optomechanical functionalities. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772601]

引用

页数：3

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