Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

被引：79

作者：

Wang, T ^{[1
]}

Chen, HC

Chiu, HW

Lin, YS

Huang, GW

Lu, SS

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Taiwan

[4] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2006年 / 54卷 / 02期

关键词：

complementary metal-oxide-semiconductor (CMOS); inductively coupled plasma (ICP); low-noise amplifier (LNA); voltage-controlled oscillator (VCO);

D O I：

10.1109/TMTT.2005.862715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low noise figures (NFs) within a specific frequency range are also presented. A 2-dB increase in peak gain (from 21 to 23 dB) and a 0.5-dB (from 2.28 to 1.78 dB) decrease in minimum NF are achieved in the LNA while a 3-dB suppression of phase noise is obtained in the VCO after the ICP backside dry etching. These results show that the CMOS-process-compatible backside ICP etching technique is very promising for system-on-a-chip applications.

引用

页码：580 / 588

页数：9

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