Preparation and characterization of F doped SnO2 films and electrochromic properties of FTO/NiO films

被引：31

作者：

Purushothaman, K. K. ^{[1
]}

Dhanashankar, M. ^{[2
]}

Muralidharan, G. ^{[1
]}

机构：

[1] Gandhigram Rural Univ, Dept Phys, Gandhigram 624302, India

[2] Kamraj Coll Engn & Technol, Dept Phys, Virudhinagar 626001, India

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 01期

关键词：

thin films; spray pyrolysis; FTO; sol-gel; electrochromics; OXIDE THIN-FILMS; SPRAY-PYROLYSIS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; TEMPERATURE; DEPENDENCE;

D O I：

10.1016/j.cap.2007.11.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of structural and electrical properties of SnO2 films, prepared using spray pyrolysis technique, on the concentration of fluorine is reported. X-ray diffraction., FTIR and scanning electron microscope (SEM) studies have been performed on SnO2:F (FTO) films coated on glass Substrates. Measured values of Hall coefficient and resistivity are reported. The 7.5 m% of F doped film had a resistivity of 15 x 10(-4)Omega cm. carrier density of 18.7 x 10(19) cm(-3) and mobility of 21.86 cm(2)V(-1)S(-1). The NiO film was coated on an FTO substrate and its electrochromic (EC) behavior was studied and the results are reported and discussed in this paper. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：67 / 72

页数：6

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