MIXED-MODE IMPEDANCE AND REFLECTION COEFFICIENT OF TWO-PORT DEVICES

被引：15

作者：

Carrasco, T. ^{[1
]}

Sieiro, J. ^{[1
]}

Lopez-Villegas, J. M. ^{[1
]}

Vidal, N. ^{[1
]}

Gonzalez-Echevarria, R. ^{[2
,3
]}

Roca, E. ^{[2
,3
]}

机构：

[1] Univ Barcelona, Fac Phys, Dept Elect, E-08028 Barcelona, Spain

[2] CSIC, Inst Microelect Seville, Seville 41092, Spain

[3] Univ Seville, Seville 41092, Spain

来源：

PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER | 2012年 / 130卷

关键词：

S-PARAMETER METHOD; ON-WAFER MEASUREMENTS; BALANCED ANTENNAS; DIFFERENTIAL CIRCUITS; NETWORK ANALYZER; INDUCTORS;

D O I：

10.2528/PIER12052906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From the point of view of mixed-mode scattering parameters, S, a two-port device can be excited using different driving conditions. Each condition leads to a particular set of input reflection and input impedance coefficient definitions that should be carefully applied depending on the type of excitation and symmetry of the two-port device. Therefore, the aim of this paper is to explain the general analytic procedure for the evaluation of such reflection and impedance coefficients in terms of mixed-mode scattering parameters. Moreover, the driving of a two-port device as a one-port device is explained as a particular case of a two-port mixed-mode excitation using a given set of mixed-mode loads. The theory is applied to the evaluation of the quality factor, Q, of symmetrical and non-symmetrical inductors.

引用

页码：411 / 428

页数：18

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