Optical properties of GaN nanostructures for optoelectronic applications

被引：14
作者：
Al-Douri, Y. [1 ]
机构：
[1] Univ Malaysia Perlis, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia
来源：
MALAYSIAN TECHNICAL UNIVERSITIES CONFERENCE ON ENGINEERING & TECHNOLOGY 2012 (MUCET 2012) | 2013年 / 53卷
关键词：
VAPOR-PHASE EPITAXY; REFRACTIVE-INDEX; STRUCTURAL-PROPERTIES; SEMICONDUCTORS; TEMPERATURE; PRESSURE; FILMS; DEPENDENCE; GA1-XALXN; EMISSION;
D O I：
10.1016/j.proeng.2013.02.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrochemical deposition method is used to prepare GaN nanostructure. The morphological studies using scanning electron microscopy (SEM), photoluminescence (PL) the refractive index and optical dielectric constant are investigated experimentally and theoretically, respectively. These investigations are found to be dependent on the growth time. The nanosize effect is noticed for UV detectors applications. The calculated results are in agreement with experimental and theoretical data. (C) 2013 The Authors. Published by Elsevier Ltd.
引用
收藏
页码：400 / 404
页数：5
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