Effects of nuclear fusion produced neutrons on silicon semiconductor plasma X-ray detectors

被引:12
|
作者
Kohagura, J
Cho, T
Hirata, M
Numakura, T
Minami, R
Watanabe, H
Sasuga, T
Nishizawa, Y
Yoshida, A
Nagashima, S
Tamano, T
Yatsu, K
Miyoshi, S
Hirano, K
Maezawa, H
机构
[1] Univ Tsukuba, Plasma Res Ctr, Tsukuba, Ibaraki 3058577, Japan
[2] High Energy Accelerator Res Org, Ibaraki, Japan
关键词
semiconductor detector; plasma diagnostics; neutron irradiation;
D O I
10.1016/S0168-9002(01)02020-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The effects of nuclear fusion produced neutrons on the X-ray energy responses of semiconductor detectors are characterized. The degradation of the response of position-sensitive X-ray tomography detectors in the Joint European Torus (JET) tokamak is found after neutron exposure produced by deuterium-deuterium and deuterium-tritium plasma fusion experiments. For the purpose of further detailed characterization of the neutron degradation effects, an azimuthally varying-field (AVF) cyclotron accelerator is employed using well-calibrated neutron fluence. These neutron effects on the detector responses are characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory (KEK). The effects of neutrons on X-ray sensitive semiconductor depletion thicknesses are also investigated using an impedance analyser. Novel findings of (i) the dependence of the response degradation on X-ray energies as well as (ii) the recovery of the degraded detector response due to the detector bias application are found and interpreted by systematically combined methods using a synchrotron facility, a cyclotron facility, a fusion plasma device, material analysis methods along with our recent theory on semiconductor X-ray responses. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:215 / 219
页数:5
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