Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow

被引：27

作者：

Walkey, DJ

Smy, TJ

Reimer, C

Schröter, M

Tran, H

Marchesan, D

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K2L 2C2, Canada

[2] Tech Univ Dresden, D-01062 Dresden, Germany

[3] Quake Technol, Ottawa, ON K2K 2T8, Canada

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

transistor; thermal; model; resistance; trench; isolation;

D O I：

10.1016/S0038-1101(01)00305-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heat flow in short emitter length bipolar devices in trench-isolated technologies is investigated through three-dimensional numerical thermal simulation, and thermal conduction through the trench walls is shown to be important for these structures. A new model is presented which predicts the thermal resistance of bipolar transistors in trench-isolated technologies down to emitter lengths of 1.2 mum. The effect of the parasitic thermal path introduced by emitter metal is also included in the new model. The prediction of this model is compared to numerical simulation and measurement, and found to be in excellent agreement. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：7 / 17

页数：11

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