Nanostructures, magnetic semiconductors and spintronics

被引：14

作者：

KervalishVili, Paata ^{[1
]}

Lagutin, Alexander ^{[2
]}

机构：

[1] Georgian Tech Univ, GE-0175 Tbilisi, Georgia

[2] Russian Res Ctr, IV Kurchatov Atom Energy Inst, Moscow 123182, Russia

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 08期

关键词：

semiconductor; spintronics; nanostructure; magnetic properties; spin-polarized transport;

D O I：

10.1016/j.mejo.2007.08.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this paper is to give a brief overview of recent advances in the area of semiconductor nanomaterials, which represent extremely promising applications for materials with the spin-polarized transport of the charge carriers. It is shown on the basis of the last theoretical and experimental achievements that the development of diluted semiconductors with the controlled disorder and the wide energy gaps as well as the study of their molecular structures are very prospective routes for producing of novel magnetic semiconductors. (c) 2007 Published by Elsevier Ltd.

引用

页码：1060 / 1065

页数：6

共 39 条

[1] Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility [J].