Relationship between threading dislocation and leakage current in 4H-SiC diodes

被引：82
作者：
Fujiwara, Hirokazu [1 ]
Naruoka, Hideki [1 ]
Konishi, Masaki [1 ]
Hamada, Kimimori [1 ]
Katsuno, Takashi [2 ]
Ishikawa, Tsuyoshi [2 ]
Watanabe, Yukihiko [2 ]
Endo, Takeshi [3 ]
机构：
[1] Toyota Motor Co Ltd, Toyota, Aichi 4700309, Japan
[2] Toyota Cent Res & Dev Labs Inc, Power Elect Res Div, Nagakute, Aichi 4801192, Japan
[3] DENSO Corp, Res Labs, Aichi 4700111, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 24期
关键词：
SCHOTTKY-BARRIER DIODES; DEFECTS; PERFORMANCE; SUBSTRATE; BREAKDOWN; IMPACT;
D O I：
10.1063/1.4718527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact of threading dislocation density on the leakage current of reverse current-voltage (I-V) characteristics in Schottky barrier diodes (SBDs), junction barrier Schottky diodes, and p-n junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. Consequently, the correlation in SBDs is strong but weak in PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. The threading dislocations were found to be in the same location as the current leakage points in the SBDs but not in the PNDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718527]
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页数：4
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