Energy storage performance of (K, Na)NbO3 ferroelectric thin films with Mn-Ta and Mn-Ti co-doping

被引：16
作者：
Zhao, Chao [1 ]
Meng, Xianghe [1 ]
Wang, Wen [1 ]
Zhou, Yu [1 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Inst Adv Ceram, Harbin 150001, Heilongjiang, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2019年 / 45卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Potassium sodium niobate; Ferroelectric film; Doping modification; Energy storage density; LEAD-FREE CERAMICS; BREAKDOWN STRENGTH; RELAXOR; DENSITY; TEMPERATURE;
D O I：
10.1016/j.ceramint.2019.04.073
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The lead-free KNN (K0.5Na0.5NbO3) films were co-doped with Mn-Ta and Mn-Ti via the Sol-Gel method. With Mn doping, the leakage behavior in the KNN films is significantly weakened. Annealed at 700 degrees C, the KNNM film shows good crystallinity, dense morphology and better energy storage performance. With Mn-Ta and Mn-Ti co-doping, the KNNM4R (K0.5Na0.5Nb0.96-xMn0.04RxO3, R = Ta, Ti) films still show tetragonal phase and the smoothest surface morphology at 6mol% Ta or Ti content, with about 200 nm in thickness. Under the breakdown field strength of 2700 kV/cm and 2800 kV/cm, the (P-m-P-r) of Ta6 and Ti6 films are 20.7 mu C/cm(2) and 22.4 mu C/ cm(2), the W(rec )and eta are up to 20.7 J/cm(3), 23.9 J/cm(3) and 57%, respectively.
引用
收藏
页码：13772 / 13779
页数：8
相关论文
共 31 条
[1]   Effect of Ta content on the phase transition and piezoelectric properties of lead-free (K0.48Na0.48Li0.04)(Nb0.995-xMn0.005Tax)O3 thin film [J].
Ahn, Chang Won ;
Seog, Hae Jin ;
Ullah, Aman ;
Lee, Sun Young ;
Kim, Jin Won ;
Kim, Sang Su ;
Park, Moonkyu ;
No, Kwangsoo ;
Kim, Ill Won .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)
[2]   Optoelectronic properties and polar nano-domain behavior of sol-gel derived K0.5Na0.5Nb1-xMnxO3-δ nanocrystalline films with enhanced ferroelectricity [J].
Deng, Qinglin ;
Zhang, Jinzhong ;
Huang, Ting ;
Xu, Liping ;
Jiang, Kai ;
Li, Yawei ;
Hu, Zhigao ;
Chu, Junhao .
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (31) :8225-8234
[3]   Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3 thin films [J].
Guo, Xin ;
Ge, Jun ;
Ponchel, Freddy ;
Remiens, Denis ;
Chen, Ying ;
Dong, Xianlin ;
Wang, Genshui .
THIN SOLID FILMS, 2017, 632 :93-96
[4]   A review on the dielectric materials for high energy-storage application [J].
Hao, Xihong .
JOURNAL OF ADVANCED DIELECTRICS, 2013, 3 (01)
[5]   Defect control for low leakage current in K0.5Na0.5NbO3 single crystals [J].
Kizaki, Yoichi ;
Noguchi, Yuji ;
Miyayama, Masaru .
APPLIED PHYSICS LETTERS, 2006, 89 (14)
[6]   Improvement in Ferroelectric Properties of Chemically Synthesized Lead-Free Piezoelectric (K,Na)(Nb,Ta)O3 Thin Films by Mn Doping [J].
Kondo, Naoya ;
Sakamoto, Wataru ;
Lee, Bong-Yeon ;
Iijima, Takashi ;
Kumagai, Jun ;
Moriya, Makoto ;
Yogo, Toshinobu .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (09)
[7]   Flexible high energy density capacitors using La-doped PbZrO3 anti-ferroelectric thin films [J].
Lee, Hye Ji ;
Won, Sung Sik ;
Cho, Kyung Ho ;
Han, Chung Kyu ;
Mostovych, Nicholas ;
Kingon, Angus I. ;
Kim, Seung-Hyun ;
Lee, Hee Young .
APPLIED PHYSICS LETTERS, 2018, 112 (09)
[8]   Effect of Mn substitution on ferroelectric and leakage current characteristics of lead-free (K0.5Na0.5)(MnxNb1-x)O3 thin films [J].
Lee, Sun Young ;
Ahn, Chang Won ;
Ullah, Aman ;
Seog, Hae Jin ;
Kim, Jin Soo ;
Bae, Se Hwan ;
Kim, Ill Won .
CURRENT APPLIED PHYSICS, 2011, 11 (03) :S266-S269
[9]   Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O3 antiferroelectric thin-film capacitors [J].
Lin, Zhengjie ;
Chen, Ying ;
Liu, Zhen ;
Wang, Genshui ;
Remiens, Denis ;
Dong, Xianlin .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 38 (09) :3177-3181
[10]   Enhanced energy storage properties of BaTiO3-Bi0.5Na0.5TiO3 lead-free ceramics modified by SrY0.5Nb0.5O3 [J].
Liu, Xiaoyu ;
Yang, Haibo ;
Yan, Fei ;
Qin, Yi ;
Lin, Ying ;
Wang, Tong .
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 778 :97-104
1234