All-printed and transparent single walled carbon nanotube thin film transistor devices

被引：33

作者：

Sajed, Farzam ^{[1
]}

Rutherglen, Christopher ^{[1
]}

机构：

[1] UCLA Calif NanoSyst Inst CNSI, Aneeve Nanotechnol, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期

关键词：

FIELD-EFFECT TRANSISTORS; CIRCUITS;

D O I：

10.1063/1.4824475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present fully transparent single-walled all-carbon nanotube thin film transistors (SWCNT TFT) fabricated using low-cost inkjet printing methods. Such a demonstration provides a platform towards low cost fully printed transparent electronics. The SWCNT TFTs were printed with metallic and semiconducting SWCNT using a room temperature printing process, without the requirement of expensive cleanroom facilities. The unoptimized SWCNT TFTs fabricated exhibited an I-on/off ratio of 92 and mobility of 2.27 cm(2) V-1 s(-1) and transmissivity of 82%. The combination of both high electrical performance and high transparency make all-SWCNT TFTs desirable for next generation transparent display backplanes and products such as Google Glass. (C) 2013 AIP Publishing LLC.

引用

页数：4

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