Characterization of interface traps in subthreshold regions of implanted 6H-and 4H-SiC MOSFETs

被引：1
|
作者：
Zeng, YA [1 ]
Softic, A [1 ]
White, MH [1 ]
机构：
[1] Lehigh Univ, Sherman Fairchild Ctr, Bethlehem, PA 18015 USA
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984478
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the interface trap densities (D-it) of 6H- and 4H-SiC MOSFET's in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and D-it(E-T) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports [1-4].
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收藏
页码：213 / 215
页数：3
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