Precessional reversal in orthogonal spin transfer magnetic random access memory devices

被引：27

作者：

Liu, H. ^{[1
]}

Bedau, D. ^{[1
]}

Backes, D. ^{[1
]}

Katine, J. A. ^{[2
]}

Kent, A. D. ^{[1
,3
]}

机构：

[1] NYU, Dept Phys, New York, NY 10003 USA

[2] HGST Res, San Jose, CA 95135 USA

[3] Spin Transfer Technol, Boston, MA 02110 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

TORQUES;

D O I：

10.1063/1.4737010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-shot time-resolved resistance measurements have been used to determine the magnetization reversal mechanisms of orthogonal spin transfer magnetic random access memory (OST-MRAM) devices at nanosecond time scales. There is a strong asymmetry between antiparallel (AP) to parallel (P) and P to AP transitions under the same pulse conditions. P to AP transitions are shown to occur by precession of the free layer magnetization, while the AP to P transition is typically direct, occurring in less than 200 ps. We associate the asymmetry with spin torques perpendicular to the plane of the free layer, an important characteristic of OST-MRAM bit cells that can be used to optimize device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737010]

引用

页数：4

共 10 条

[1] Planar approximation for spin transfer systems with application to tilted polarizer devices [J].