Fine Pitch Cu to Cu interconnects for 2.5D Packaging

被引：0

作者：

Xie, Ling ^{[1
]}

Chong, Ser Choong ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore

来源：

2018 IEEE 20TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fine Pitch interconnects for 2.5D Packaging is developed with the aim of meeting the need for higher functionality and higher power. Cu-Cu interconnect is preferred over the solder interconnect as solder may merged as the pitch is of fine dimension. Cu-Cu interconnects have many challenges such as Cu oxide formation, co-planity issues and others. In this work, we had demonstrated fine pitch Cu-Cu interconnects for 2.5D packaging with the use of non-conductive film.

引用

页码：321 / 325

页数：5

共 8 条

[1]

Adeel A., 2017, EL COMP TECHN C ECTC, P1277

[2]

[Anonymous], ELECT DEVICE LETT

[3]

Bersch Eric, 2013, CHIP SCALE REV, V17, P22

[4]

Chong SC, 2016, EL PACKAG TECH CONF, P102

[5]

Xie L, 2014, 2014 IEEE 16TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), P400, DOI 10.1109/EPTC.2014.7028388

[6]

Xie L, 2013, EL PACKAG TECH CONF, P493, DOI 10.1109/EPTC.2013.6745769

[7] 6um Pitch High Density Cu-Cu Bonding for 3D IC Stacking [J].

Xie, Ling ;

Wickramanayaka, Sunil ;

Chong, Ser Choong ;

Sekhar, Vasarla Nagendra ;

Ismeal, Daniel ;

Ye, Yong Liang .

2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, :2126-2133

[8]

Xie Ling, 2017 IEEE 67 EL COMP, P1573

← 1 →