Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures

被引：29
作者：
Engelhardt, R
Pohl, UW
Bimberg, D
Litvinov, D
Rosenauer, A
Gerthsen, D
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 10期
关键词：
D O I：
10.1063/1.371563
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Efficient resonant excitonic waveguiding is achieved in laser structures, grown by metallorganic chemical vapor deposition, with stacked CdSe quantum islands which were separated by ternary ZnSSe barriers. Plastic relaxation within the stack is shown to be suppressed by adjusting the sulfur content in the barriers to compensate the strain. Excitonic lasing with low threshold intensities is demonstrated well above room temperature with I-th(77 K)=0.8 kW/cm(2) and I-th(300 K)=55 kW/cm(2). (C) 1999 American Institute of Physics. [S0021-8979(99)05522-X].
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页码：5578 / 5583
页数：6
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